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| inchange semiconductor isc product specification isc silicon pnp darlington power transistor 2SB1551 description collector-emitter breakdown voltage- : v (br)ceo = -80v(min) high dc current gain- : h fe = 1000(min)@ (v ce = -3v; i c = -5a) applications designed for power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -80 v v ceo collector-emitter voltage -80 v v ebo emitter-base voltage -7 v i c collector current-continuous -10 a i cm collector current-pulse -20 a collector power dissipation @t a =25 2 p c collector power dissipation @t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlington power transistor 2SB1551 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -5ma; i b = 0 b -80 v v (br)cbo collector-base breakdown voltage i c = -50 a; i e = 0 -80 v v ce (sat) collector-emitter saturation voltage i c = -3a; i b = -6ma b -1.5 v i cbo collector cutoff current v cb = -80v; i e = 0 -100 a i ebo emitter cutoff current v eb = -5v; i c = 0 -3 ma h fe dc current gain i c = -5a; v ce = -3v 1000 20000 c ob output capacitance i e = 0; v cb = -10v; f test = 1mhz 90 pf f t current-gain?bandwidth product i e = 0.5a; v ce = -5v; f test = 10mhz 12 mhz isc website www.iscsemi.cn 2 |
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